Metastability of Oxygen Donors in AlGaN
نویسندگان
چکیده
Experimental and theoretical evidence is presented for the metastability of oxygen donors in AlxGa12xN. As the aluminum content increases, Hall effect measurements reveal an increase in the electron activation energy, consistent with the emergence of a deep DX level from the conduction band. Persistent photoconductivity is observed in Al0.39Ga0.61N:O at temperatures below 150 K after exposure to light, with an optical threshold energy of 1.3 eV. A configuration coordinate diagram is obtained from first-principles calculations and yields values for the capture barrier, emission barrier, and optical threshold which are in good agreement with the experimental results. [S0031-9007(98)05950-X]
منابع مشابه
Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence
Articles you may be interested in Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors Appl. The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress Appl. Role of oxy...
متن کاملAdvanced Gate Technologies for State-of-the-art f[subscript T] in AlGaN/GaN HEMTs
In this paper, the lower-than-expected frequency performance observed in many AlGaN/GaN high electron mobility transistors (HEMTs) has been attributed to a significant drop of the intrinsic small-signal transconductance (gm) with respect to the intrinsic DC gm. To reduce this gmcollapse and improve high frequency performance, we have developed a new technology based on a combination of vertical...
متن کاملEffects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors
In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...
متن کاملبهره کوانتومی آشکارساز نقطه کوانتومی هسته/ پوسته GaN/AlGaN
In this work, oscillator strength and quantum efficiency of new spherical GaN/AlGaN quantum dot was investigated. In order to obtain these parameters, at first, Schrödinger equation is solved in GaN/AlGaN spherical coordinate system in effective mass approximation, and energy level, wave function and transition matrix element of the parameter are obtained. The results show that oscillator stre...
متن کاملوابستگی انرژی گذارهای اپتیکی در نانوساختارهای چاههای کوانتومی GaN/AlGaN به پهنای سد و چاه کوانتومی
Internal polarizations field which take place in quantum structures of group-III nitrides have an important consequence on their optical properties. Optical properties of wurtzite AlGaN/GaN quantum well (QW) structures grown by MBE and MOCVD on c-plane sapphire substrates have been investigated by means of photoluminescence (PL) and time resolved photoluminescence (TRPL) at low-temperature. PL ...
متن کامل